C6D25170H Datasheet | Wolfspeed

Description With the performance advantages of a Silicon Carbide (Si C) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. Si C diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of Si C products, Si C diodes are able to provide lower overall system costs in a variety of diverse applications. Package Types: TO-247-2 Marking: C6D25170H Features - Low Forward Voltage (VF) Drop with Positive Temperature Coefficient - Zero Reverse Recovery Current / Forward Recovery Voltage - Temperature-Independent Switching Behavior Applications - Industrial Switched Mode Power Supplies - Uninterruptible & AUX Power Supplies - Boost for PFC & DC-DC Stages - Solar Inverters Maximum Ratings (TC = 25°C Unless Otherwise Specified) Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation i2t Value Symbol VRRM VDC IF IFRM IFSM Ptot ∫ i2t Value 1700 1700 83 39 29 131 73 206 173 375 162 212 149 Unit Test Conditions TC = 25 °C TC = 135 °C TC = 150 °C A TC = 25 °C, tp = 10 ms, Half Sine Wave TC = 110 °C, tp = 10 ms, Half Sine Wave TC = 25 °C, tp = 10 ms, Half Sine Wave TC = 110 °C, tp = 10 ms, Half Sine Wave W TC = 25 °C TC = 110 °C A2s TC = 25 °C, tp = 10 ms TC = 110 °C, tp = 10 ms Notes Fig. 3 Fig. 8 Fig. 4 Rev. 0, November 2022 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed./power © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. Electrical Characteristics Parameter...