| Description | With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requiremen... |
| Features |
• Low Forward Voltage (VF) Drop with Positive Temperature Coefficient • Zero Reverse Recovery Current / Forward Recovery Voltage • Temperature-Independent Switching Behavior Applications • Industrial Switched Mode Power Supplies • Uninterruptible & AUX Power Supplies • Boost for PFC & DC-DC Stages • Solar Inverters Maximum Ratings (TC = 25°C Unle... |
| Datasheet |
 C6D25170H Datasheet 564.79KB |
