Datasheet Details
| Part number | CGH09120F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 4.46 MB |
| Description | GaN HEMT |
| Datasheet | CGH09120F-Wolfspeed.pdf |
|
|
Overview: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM.
| Part number | CGH09120F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 4.46 MB |
| Description | GaN HEMT |
| Datasheet | CGH09120F-Wolfspeed.pdf |
|
|
|
Wolfspeed's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
Package Type: 440095 PN: CGH09120F Typical Performance Over 800-950 MHz (TC = 25˚C) of Demonstration Amplifier Parameter Gain @ 43 dBm ACLR @ 43 dBm Drain Efficiency @ 43 dBm 800 MHz 19.2 -40.5 31.0 850 MHz 21.0 -40.5 33.7 900 MHz 21.6 -39.0 36.6 950 MHz 21.6 -36.5 39.3 Unit dB dBc % Notes: 1 Measured in the CGH09120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
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