CGH21120F hemt equivalent, gan hemt.
* 1.8 - 2.3 GHz Operation
* 15 dB Gain
* -35 dBc ACLR at 20 W PAVE
* 35% Efficiency at 20 W PAVE
* High Degree of DPD Correction can be Applied
Large.
The transistor is supplied in a ceramic/metal flange package.
Package Type: 440162 PN: CGH21120F
Typical Performance .
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