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CGH55015F2 Datasheet Gan Hemt

Manufacturer: Wolfspeed

Overview: CGH55015F2/P2 10 W, C-Band, Unmatched, GaN HEMT.

General Description

Wolfspeed's CGH55015F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/P2 ideal for C-band pulsed or CW saturated amplifiers.

The transistor is available in both screwdown, flange and solder-down, pill packages.

Based on appropriate external match adjustment, the CGH55015F2/P2 is suitable for applications up to 6 GHz.

Key Features

  • 4.5 to 6.0 GHz Operation.
  • 12 dB Small Signal Gain at 5.65 GHz.
  • 13 W typical PSAT.
  • 60% Efficiency at PSAT.
  • 28 V Operation.

CGH55015F2 Distributor