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CMPA901A020S Datasheet Preview

CMPA901A020S Datasheet

GaN MMIC Power Amplifier

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CMPA901A020S
9.0 - 10.0 GHz, 20 W, Packaged GaN MMIC Power Amplifier
Description
Cree’s CMPA901A020S is a packaged, 20W HPA utilizing Cree’s high performance,
0.15um GaN on SiC production process. The CMPA901A020S operates from
9-10 GHz and targets pulsed radar applications such as marine weather radar.
With 3 stages of gain, this high performance amplifier provides >30dB of large
signal gain, potentially lowering the transmit BOM count, and >50% efficiency
to support lower system DC power requirements and simplify system thermal
management solutions. Packaged in a small 6x6 mm plastic overmold QFN, the
CMPA901A020S also supports reduced board space requirements and high-
throughput manufacturing lines.
Typical Performance Over 9.0-10.0 GHz (TC = 25˚C)
Parameter
Small Signal Gain
9.0 GHz
35.7
9.5 GHz
35.35
POUT@PIN = 12 dBm
25.25
23.5
Power Gain @ PIN = 12 dBm
32.0
31.7
PAE @ PIN = 12 dBm
53.6
51.1
10.0 GHz
35.86
22.8
31.5
49.0
PN: CMPA901A020S
Package Type: 6x6 QFN
Units
dB
W
dB
%
Features
Freq: 9 – 10 GHz
Psat > 20 W
PAE > 45%
LS Gain > 30 dB
6x6 mm Overmold QFN
Lower system costs
Reduced board area
Note: Features are typical performance across
frequency under 25°C operation. Please reference
performance charts for additional details.
Applications
X-Band Pulsed Radar
Marine Weather Radar
Military Radar
40 39 38 37 36 35 34 33 32 31
1
30
2
29
3
28
4
27
5
26
6
25
7
24
8
23
9
22
10
21
11 12 13 14 15 16 17 18 19 20
Figure 1.
Rev 0.0 – September 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com




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CMPA901A020S Datasheet Preview

CMPA901A020S Datasheet

GaN MMIC Power Amplifier

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CMPA901A020S
2
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Maximum Forward Gate Current
Maximum Drain Current
Soldering Temperature
Symbol
VDSS
VGS
TSTG
IG
IDMAX
TS
Rating
84
-10, +2
-55, +150
8
3.8
260
Units
VDC
VDC
˚C
mA
A
˚C
Conditions
25°C
25°C
25°C
Electrical Characteristics (Frequency = 9.0 GHz to 10.0 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics
Symbol Min. Typ. Max. Units Conditions
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current1
Drain-Source Breakdown Voltage
RF Characteristics2,3
VGS(TH)
VGS(Q)
IDS
VBD
-2.6 -2.1 -1.6 V
-1.9
VDC
1.5 2.9
A
84
V
VDS = 10 V, ID = 8 mA
VDD = 28 V, ID = 235 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 8 mA
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power
Output Power
Output Power
Power Gain
Power Gain
Power Gain
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
S21
S11
S22
POUT1
POUT2
POUT3
G1
G2
G3
PAE1
PAE2
PAE3
35.0
-23.8
-9.4
44.0
43.7
43.6
32.0
31.7
31.5
53.6
51.1
49.0
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
%
%
%
VDD = 28 V, IDQ = 800 mA, Freq = 9-10 GHz
VDD = 28 V, IDQ = 800 mA, Freq = 9-10 GHz
VDD = 28 V, IDQ = 800 mA, Freq = 9-10 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 9.0 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 9.5 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 10.0 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 9.0 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 9.5 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 10.0 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 9.0 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 9.5 GHz
VDD = 28 V, IDQ = 235 mA, PIN = 12 dBm, Freq = 10.0 GHz
Output Mismatch Stress
VSWR
5:1 Y
No damage at all phase angles, VDD = 28 V, IDQ = 235 mA, Pulse
Width = 100 μs, Duty Cycle = 10%, POUT = 20 W
Notes:
1 Scaled from PCM data
2 All data tested in CMPA901A020S-AMP1
3 Pulse Width = 100 μs; Duty Cycle = 10%
Thermal Characteristics
Parameter
Operating Junction Temperature
Thermal Resistance, Junction to Case (packaged)
Symbol
TJ
RθJC
Rating
225
2.2
Units
˚C
˚C/W
Conditions
100 μs, 10%, PDISS = 25.5 W
Rev 0.0 – September 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com


Part Number CMPA901A020S
Description GaN MMIC Power Amplifier
Maker Wolfspeed
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