CMPA901A035F

Power Amplifier

MACOM

CMPA901A035F Features

* 35 W typical PSAT

* >33% typical power added efficiency

* 22.5 dB large signal gain

* High temperature operation Applications

* Military radar

* Marine radar

* Weather radar

* Medical applications Note: Features are typical performa

CMPA901A035F General Description

The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a the.

CMPA901A035F Datasheet (1.84 MB)

CMPA901A035F Datasheet Preview — Preview of CMPA901A035F PDF

Datasheet Details

Part number:

CMPA901A035F

Manufacturer:

MACOM

File Size:

1.84 MB

Description:

Power amplifier.

📁 Related Datasheet

CMPA901A035F - Power Amplifier (Wolfspeed)
CMPA901A035F 35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier Description The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor.

CMPA901A035F1 - Power Amplifier (MACOM)
CMPA901A035F1 35 W, 9.0 - 10 GHz, GaN MMIC, Power Amplifier Description The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated c.

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CMPA901A020S - GaN MMIC Power Amplifier (Wolfspeed)
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CMPA9396025S - GaN MMIC Power Amplifier (Wolfspeed)
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CMPA0060002D - GaN HEMT MMIC Power Amplifier (Wolfspeed)
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CMPA0060002F - GaN MMIC Power Amplifier (CREE)
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) .

CMPA0060002F - GaN MMIC Power Amplifier (Wolfspeed)
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Description Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility .

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CMPA901A035F Power Amplifier MACOM

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CMPA901A035F Features

CMPA901A035F General Description

Datasheet Details

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