CMPA901A035F Datasheet - MACOM

CMPA901A035F Power Amplifier

The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a the.

CMPA901A035F Features

* 35 W typical PSAT

* >33% typical power added efficiency

* 22.5 dB large signal gain

* High temperature operation Applications

* Military radar

* Marine radar

* Weather radar

* Medical applications Note: Features are typical performa

CMPA901A035F-MACOM.pdf

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Datasheet Details

Part number:

CMPA901A035F

Manufacturer:

MACOM

File Size:

1.84 MB

Description:

Power amplifier.

CMPA901A035F Distributor

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CMPA901A035F CMPA901A035F Power Amplifier MACOM