Datasheet Details
| Part number | PTAB182002FC |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 381.22 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTAB182002FC Datasheet
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General Description
The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Key Features
- include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 530 mA, ƒ = 1842 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, 3.84MHz BW 17 55 50 16 45 Gain 40 15 35 30 14 25 Efficiency 20 13 b182002fc gr1 15 36 38 40 42 44 46 48 Average Ou.