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PTRA095908NB - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange. Package Types: PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 500 mA, VGS(PEAK) = 2.10 V, ƒ = 960 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Efficiency 20 40 Gain 16 20 12 0 8 PAR @ 0.01% CCDF -20 4 -40 0 ptra09590nb-gr1a -60 25 30 35 40 45 50 55 Average Output Power (dBm) Featur.

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Datasheet Details

Part number PTRA095908NB
Manufacturer Wolfspeed
File Size 732.93 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTRA095908NB Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTRA095908NB Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz Description The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange. Package Types: PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 500 mA, VGS(PEAK) = 2.10 V, ƒ = 960 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Efficiency 20 40 Gain 16 20 12 0 8 PAR @ 0.