PXAE261908NF
Description
The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange.
Key Features
- Broadband internal input and output matching
- Asymmetric Doherty design - Main: P3dB = 90 W typical - Peak: P3dB = 180 W typical
- Typical pulsed CW performance, 2675 MHz, 28 V - Output power at P1dB = 51 W - Output power at P3dB = 240 W - Gain = 11.8 dB - Efficiency = 60%
- Capable of handling 10:1 VSWR at 28 V, 32 W (CW) output power
- Integrated ESD protection
- Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 28 V, IDQ = 450 mA, VGS(PEAK) = 1.5 V, POUT = 32 W avg, ƒ = 2675 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Adjacent Channel Power Ratio Gps
- 5 - dB hD 45
- 5 - % ACPR - -28 -26 dBc Output PAR at 0.01% probability on CCDF OPAR
