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YJL2300A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Feature
●VDS=20V,ID=4.5A RDS(ON)<25mΩ@VGS=4.5V RDS(ON)<38mΩ@VGS=2.5V
●Epoxy meets UL 94 V-0 flammability rating ●Moisture Sensitivity Level1 ●High density cell design for low RDS(ON) ●High Speed switching ●Rugged and reliable ●SOT-23 Package
Application
●Battery protection ●Load switch ●Power management
■ Maximum Ratings (TA=25℃ unless otherwise noted)
Symbol
Parameter
VDS
Drain-source Voltage
VGS
Gate-source Voltage
ID
Drain Current
IDM
Pulsed Drain Current
PD
Total Power Dissipation
RthJA TJ TSTG
Thermal Resistance From Junction To Ambient Operation Junction Temperature Storage Temperature
Value 20 ±10 4.
YJL2300A Datasheet
