YJS12G06A Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

YJS12G06A General Description

*Split Gate Trench Power MV MOSFET technology *Low RDS(ON) *Low Gate Charge *Optimized for fast-switching applications Applications *Synchronus Rectification in DC/DC and AC/DC Converters *Industrial and Motor Drive application *Absolute Maximum Ratings (TA=25℃unless ot.

YJS12G06A Datasheet (572.54 KB)

YJS12G06A Datasheet Preview — Preview of YJS12G06A PDF

Datasheet Details

Part number:

YJS12G06A

Manufacturer:

Yangzhou Yangjie

File Size:

572.54 KB

Description:

N-channel enhancement mode field effect transistor.
YJS12G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID(at VGS=10V) RDS(ON)( at VGS=10V) .

📁 Related Datasheet

YJS12G06D N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJS15G10B N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJS05GP10A P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJ162-1 YJ162-1 (ETC)

YJ60A Single-cell lithium battery power indicator (YENJI)

YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJD15N10A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJD80G06A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJG25GP10A P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJG25GP10AQ P-Channel 100V MOSFET (VBsemi)

TAGS

YJS12G06A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

Image Gallery

YJS12G06A General Description

Datasheet Details

File Size:

Description:

YJS12G06A Distributor