YJS12G06A - N-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Split Gate Trench Power MV MOSFET technology
Low RDS(ON)
Low Gate Charge
Optimized for fast-switching applications
Applications
Synchronus Rectification in DC/DC and AC/DC Converters
Industrial and Motor Drive application
Absolute Maximum Ratings (TA=25℃unless ot
P-Channel Enhancement Mode Field Effect Transistor
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YJS12G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
●VDS ●ID(at VGS=10V) ●RDS(ON)( at VGS=10V) ●RDS(ON)( at VGS=4.5V) ●100% UIS Tested
100% Rg Tested 100% ▽VDS Tested
60V 12A ＜9.0mΩ ＜13.0mΩ
Top View
General Description
●Split Gate Trench Power MV MOSFET technology ●Low RDS(ON) ●Low Gate Charge ●Optimized for fast-switching applications
Applications
●Synchronus Rectification in DC/DC and AC/DC Converters ●Industrial and Motor Drive application
■Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
VDS
Gate-source Voltage
VGS
Drain Current G
TC=25℃
ID
TC=100℃
Pulsed Drain Current C
IDM
Avalanche energy L=0.
YJS12G06A Datasheet
