YJS12G06A is N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangjie Electronic.
| Part Number | Description |
|---|---|
| YJS12G06D | N-Channel Enhancement Mode Field Effect Transistor |
| YJS15G10B | N-Channel Enhancement Mode Field Effect Transistor |
| YJS05GP10A | P-Channel Enhancement Mode Field Effect Transistor |
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C.
