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ZVN0535A Datasheet Preview

ZVN0535A Datasheet

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt VDS
* RDS(on)=50
ZVN0535A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
DG
S
E-Line
TO92 Compatible
VALUE
350
90
600
± 20
700
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 350
V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 1 3 V ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
20 nA VGS=± 20V, VDS=0V
10 µA VDS=350 V, VGS=0
400 µA VDS=280 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
150
Static Drain-Source On-State RDS(on)
Resistance (1)
50
mA VDS=25 V, VGS=10V
VGS=10V,ID=100mA
Forward Transconductance(1)(2gfs
)
100
mS VDS=25V,ID=100mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
70 pF
10 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
4 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
7
7
16
10
3-353
ns
ns VDD25V, ID=100mA
ns
ns
(
1




Zetex Semiconductors

ZVN0535A Datasheet Preview

ZVN0535A Datasheet

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

No Preview Available !

ZVN0535A
TYPICAL CHARACTERISTICS
800 VGS=
700
10V
8V
600 6V
5V
500
400
300 4V
200
100
3V
0
0 10 20 30 40 50 60 70 80 90 100
VDS - Drain Source Voltage (Volts)
Output Characteristics
400 VGS=
10V
6V
300 5V
4V
200
100
3V
0
0 4 8 12 16
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
20
20
16
12 ID=
250mA
8
4
100mA
50mA
0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
500
400 VDS=
25V
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
100
80
60
Ciss
40
20
Coss
0 Crss
0 10 20 30 40 50
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
250
200 VDS=
25V
150
100
50
0
0 100 200 300 400 500
ID(on)- Drain Current (mA)
Transconductance v drain current
3-354


Part Number ZVN0535A
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Maker Zetex Semiconductors
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