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ZVN0535A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features

  • 350 Volt VDS.
  • RDS(on)=50Ω ZVN0535A D G S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=50Ω ZVN0535A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 350 90 600 ± 20 UNIT V mA mA V mW °C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN.
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