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CSD13306W - 12-V N-Channel Power MOSFET

General Description

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile.

Key Features

  • 1 Ultra Low on Resistance.
  • Low Qg and Qgd.
  • Small Footprint 1 × 1.5 mm.
  • Low Profile 0.62 mm Height.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD13306W 12 V N Channel NexFET™ Power MOSFET CSD13306W SLPS537 – MARCH 2015 1 Features •1 Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile. Top View GSS DDD Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.