CSD13381F4 Description
This 140-mΩ, 12-V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
CSD13381F4 Key Features
- Low on-resistance
- Low Qg and Qgd
- Low threshold voltage
- Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
- Ultra-low profile
- Maximum height: 0.36-mm
- Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
CSD13381F4 Applications
- Optimized for load switch applications
- Optimized for general purpose switching