CSD13383F4 Datasheet | Texas Instruments

Features - Low on-resistance - Ultra low Qg and Qgd - Ultra-small footprint (0402 case size) - 1.0 mm × 0.6 mm - Low profile - 0.36 mm height - Integrated ESD protection diode - Rated >2 k V HBM - Rated >2 k V CDM - Lead and halogen free - Ro HS pliant 2 Applications - Optimized for load switch applications - Optimized for general purpose Switching Applications - Single-cell battery applications - Handheld and mobile applications 3 Description This 37 mΩ, 12 V N-channel Femto FET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . 0.36 mm Product Summary TA = 25°C TYPICAL VALUE Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V VGS = 4.5 V 53 37 VGS(th) Threshold...