CSD17301Q5A Datasheet | Texas Instruments

FEATURES - 2 Optimized for 5V Gate Drive - Ultralow Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Pb Free Terminal Plating - Ro HS pliant - Halogen Free - SON 5-mm × 6-mm Plastic Package APPLICATIONS - Notebook Point of Load - Point-of-Load Synchronous Buck in Networking, Tele and puting Systems - Optimized for Synchronous FET Applications DESCRIPTION The Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. Top View S1 8D S2 7D S3 G4 6D 5D P0093-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage VGS = 3V VGS = 4.5V VGS = 8V V n C n C 2.9 mΩ 2.3 mΩ 2 mΩ...