CSD17322Q5A Datasheet | Texas Instruments

FEATURES - 2 Optimized for 5V Gate Drive - Ultralow Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Pb Free Terminal Plating - Ro HS pliant - Halogen Free - SON 5-mm × 6-mm Plastic Package APPLICATIONS - Notebook Point of Load - Point-of-Load Synchronous Buck in Networking, Tele and puting Systems DESCRIPTION The Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. Figure 1. Top View S1 8D S2 7D S3 G4 6D 5D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage VGS = 4.5V VGS = 8V V n C n C 10 mΩ 7.3 mΩ V ORDERING INFORMATION Device...