CSD17484F4 Datasheet | Texas Instruments

Features - Low on-resistance - Ultra-low Qg and Qgd - Low-threshold voltage - Ultra-small footprint (0402 Case Size) - 1.0 mm × 0.6 mm - Ultra-low profile - 0.2-mm height - Integrated ESD protection diode - Rated > 4-k V HBM - Rated > 2-k V CDM - Lead and halogen free - Ro HS pliant 2 Applications - Optimized for load switch applications - Optimized for general purpose switching applications - Battery applications - Handheld and mobile applications 3 Description This 99-mΩ, 30-V, N-Channel Femto FET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. 0.20 mm Product Summary TA = 25°C TYPICAL VALUE Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain VGS = 1.8 V RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V VGS = 4.5 V 125 107 VGS = 8.0...