CSD17483F4 Description
This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%.
CSD17483F4 Key Features
- 1 Low On-Resistance
- Low Qg and Qgd
- Low-Threshold Voltage
- Ultra-Small Footprint (0402 Case Size)
- 1.0 mm × 0.6 mm
- Ultra-Low Profile
- 0.35-mm Height
- Integrated ESD Protection Diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
CSD17483F4 Applications
- Optimized for Load Switch Applications
- Optimized for General Purpose Switching