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CSD17483F4 Datasheet N-Channel MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD17483F4 SLPS447E – JULY 2013 – REVISED APRIL 2018 CSD17483F4 30-V N-Channel FemtoFET™ MOSFET.

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General Description

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Part Dimensions 0.35 mm Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 1010 130 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 0.85 370 240 200 UNIT V pC pC mΩ V DEVICE CSD17483F4 CSD17483F4T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel Femto(0402) 1.00 mm × 0.60 mm SMD Lead Less SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • 1 Low On-Resistance.
  • Low Qg and Qgd.
  • Low-Threshold Voltage.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35-mm Height.
  • Integrated ESD Protection Diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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