CSD18534Q5A Datasheet | Texas Instruments

Features - 1 Ultra-Low Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Logic Level - Pb Free Terminal Plating - Ro HS pliant - Halogen Free - SON 5 mm × 6 mm Plastic Package 2 Applications - DC-DC Conversion - Secondary Side Synchronous Rectifier - Isolated Converter Primary Side Switch - Motor Control 3 Description This 7.8 mΩ, 60 V, SON 5 × 6 mm Nex FET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (10 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage TYPICAL VALUE VGS = 4.5 V VGS = 10 V 9.9 7.8 UNIT V n C n C mΩ mΩ V Ordering Information(1) DEVICE...