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CSD23202W10 Datasheet Preview

CSD23202W10 Datasheet

P-Channel Power MOSFET

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CSD23202W10
SLPS506 – AUGUST 2014
CSD23202W10 12-V P-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Small Footprint 1 mm × 1 mm
• Low Profile 0.62-mm Height
• Pb Free
• Gate ESD Protection – 3 kV
• RoHS Compliant
• Halogen Free
2 Applications
• Battery Management
• Load Switch
• Battery Protection
3 Description
This 12 V, 44 mΩ device is designed to deliver the
lowest on-resistance and gate charge in a small
1 mm × 1 mm outline with excellent thermal
characteristics in an ultra-low profile.
.
Top View
D
D
G
S
P0097-01
.
.
.
.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source On-
Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–12
2.9
0.28
VGS = –1.5 V
82
VGS = –1.8 V
67
VGS = –2.5 V
54
VGS = –4.5 V
44
–0.60
UNIT
V
nC
nC
m
m
m
m
V
Device
CSD23202W10
CSD23202W10T
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
250 7-Inch Reel
1 × 1-mm Wafer
Level Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM Pulsed Drain Current(2)
Continuous Gate Clamp Current
IG
Pulsed Gate Clamp Current
PD
Power Dissipation(1)
TJ, Operating Junction and
Tstg Storage Temperature Range
VALUE
–12
–6
–2.2
–25
–0.5
–7
1
UNIT
V
V
A
A
A
A
W
–55 to 150 °C
(1) Device operating at a temperature of 105°C
(2) Typ RθJA = 195°C/W, Pulse width 100 μs, duty cycle 1%
150
135
120
105
90
75
60
45
30
15
0
0
RDS(on) vs VGS
TC = 25°C,I D = − 0.5 A
TC = 125°C,I D = −0.5 A
1
2
3
4
5
6
VGS - Gate-to- Source Voltage (V)
G001
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Gate Charge
ID = −0.5A
VDS = −6V
0.5
1
1.5
2
2.5
3
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD23202W10 Datasheet Preview

CSD23202W10 Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD23202W10
SLPS506 – AUGUST 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD23202W10 Package Dimensions ...................... 8
7.2 Land Pattern Recommendation ................................ 9
7.3 Tape and Reel Information ....................................... 9
4 Revision History
DATE
August 2014
REVISION
*
NOTES
Initial release.
2
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Product Folder Links: CSD23202W10
Copyright © 2014, Texas Instruments Incorporated


Part Number CSD23202W10
Description P-Channel Power MOSFET
Maker etcTI
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