CSD23280F3T Datasheet | Texas Instruments

Features - 1 Low On-Resistance - Ultra-Low Qg and Qgd - High-Operating Drain Current - Ultra-Small Footprint - 0.73 mm × 0.64 mm - Ultra-Low Profile - 0.35-mm Max Height - Integrated ESD Protection Diode - Rated > 4-k V HBM - Rated > 2-k V CDM - Lead and Halogen Free - Ro HS pliant 2 Applications - Optimized for Load Switch Applications - Optimized for General Purpose Switching Applications - Battery Applications - Handheld and Mobile Applications 3 Description This - 12-V, 97-mΩ, P-Channel Femto FET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. Product Summary TA = 25°C Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE - 12 0.95 0.068 VGS = - 1.5 V 230 VGS = - 1.8 V 180 VGS = - 2.5 V 129 VGS = - 4.5 V...