Datasheet Details
| Part number | CSD25483F4 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.42 MB |
| Description | P-Channel Power MOSFET |
| Datasheet |
 CSD25483F4 Datasheet
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General Description
This 210 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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Key Features
- 1 Ultra-Low On-Resistance.
- Ultra-Low Qg and Qgd.
- High Operating Drain Current.
- Ultra-Small Footprint (0402 Case Size).
- 1.0 mm × 0.6 mm.
- Ultra-Low Profile.
- 0.35 mm Max Height.
- Integrated ESD Protection Diode.
- Rated >4 kV HBM.
- Rated >2 kV CDM.
- Lead and Halogen Free.
- RoHS Compliant 2.