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CSD25483F4 Datasheet Preview

CSD25483F4 Datasheet

P-Channel Power MOSFET

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CSD25483F4
SLPS449D – OCTOBER 2013 – REVISED OCTOBER 2014
CSD25483F4 20 V P-Channel FemtoFET™ MOSFET
1 Features
1 Ultra-Low On-Resistance
• Ultra-Low Qg and Qgd
• High Operating Drain Current
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
• Ultra-Low Profile
– 0.35 mm Max Height
• Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 210 mΩ, 20 V P-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 mm
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–20
959
161
VGS = –1.8 V 530
VGS = –2.5 V 338
VGS = –4.5 V 210
–0.95
UNIT
V
pC
pC
m
m
m
V
Device
CSD25483F4
CSD25483F4T
.
Ordering Information(1)
Qty Media
Package
3000
250
7-Inch
Reel
Femto (0402)
1.0 mm × 0.6 mm
Land Grid Array (LGA)
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM
Pulsed Drain Current(2)
Continuous Gate Clamp Current
IG
Pulsed Gate Clamp Current(2)
PD
Power Dissipation(1)
Human Body Model (HBM)
V(ESD) Charged Device Model (CDM)
VALUE
–20
–12
–1.6
–6.5
–35
–350
500
4
2
UNIT
V
V
A
A
mA
mW
kV
kV
TJ,
Operating Junction and
Tstg Storage Temperature Range
–55 to 150 °C
(1) Typical RθJA = 85°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2) Pulse duration 300 μs, duty cycle 2%
Top View
0.60 mm
.
.
.
.
1.00 mm
D
GS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD25483F4 Datasheet Preview

CSD25483F4 Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD25483F4
SLPS449D – OCTOBER 2013 – REVISED OCTOBER 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical Data..................................................... 8
7.1 Mechanical Dimensions ............................................ 8
7.2 Recommended Minimum PCB Layout...................... 9
7.3 Recommended Stencil Pattern ................................. 9
7.4 CSD25483F4 Embossed Carrier Tape
Dimensions .............................................................. 10
4 Revision History
Changes from Revision C (July 2014) to Revision D
Page
• Corrected timing VDS to read –10 V ....................................................................................................................................... 3
Changes from Revision B (February 2014) to Revision C
Page
• Corrected capacitance units to read pF in Figure 5 ............................................................................................................... 5
Changes from Revision A (December 2013) to Revision B
Page
• Updated lead and halogen free in features ........................................................................................................................... 1
• Added IG parameter ................................................................................................................................................................ 1
• Lowered IDSS limit.................................................................................................................................................................... 3
• Lowered IGSS limit ................................................................................................................................................................... 3
Changes from Original (October 2013) to Revision A
Page
• Fixed resistance typo.............................................................................................................................................................. 1
• Added small reel..................................................................................................................................................................... 1
2
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Copyright © 2013–2014, Texas Instruments Incorporated
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Part Number CSD25483F4
Description P-Channel Power MOSFET
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