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12N60A - N-Channel Power MOSFET

Download the 12N60A datasheet PDF. This datasheet also covers the 12N60 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.

threshold voltage of 4 volts.

They are designed for use in applications such as switched mode power supplies.

Features

  • RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max. ) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (12N60-nELL.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Nell Power Semiconductor

Part Number Description
12N60AF N-Channel Power MOSFET
12N60 N-Channel Power MOSFET
12N65 N-Channel Power MOSFET
12N65A N-Channel Power MOSFET
12N65AF N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
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