LN2311 transistor equivalent, p-channel enhancement mode field effect transistor.
* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* SOT-23-3L/B package
* Package
* SOT-23-3L/B
VDSS -30V
Product Summary ID
-4.4A
RDS(ON)(mΩ)TYP 52 @ VGS=-10V 65 @ VGS=-4.5V
* Features
* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* SOT-23-3L/B package
* Package
*.
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