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NP35S03QR - 30V N-Channel Enhancement Mode MOSFET

Description

The NP35S03QR uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =30V，ID =35A RDS(ON)=7.3mΩ (typical) @ VGS=10V RDS(ON)=10 mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet Details

Part number NP35S03QR
Manufacturer natlinear
File Size 500.21 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP35S03QR Datasheet

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Full PDF Text Transcription

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NP35S03QR 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP35S03QR uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. D G S General Features  VDS =30V，ID =35A RDS(ON)=7.3mΩ (typical) @ VGS=10V RDS(ON)=10 mΩ (typical) @ VGS=4.
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