Datasheet4U Logo Datasheet4U.com

NX3008PBK - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Very fast switching.
  • Low threshold voltage.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • AEC-Q101 qualified 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics Tj = 25 °C VGS = -4.
Published: |