PBSS4032NZ Datasheet 4.9A NPN transistor

Manufacturer: Nexperia

Datasheet Details

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PZ.

1.2

PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev.

01 — 31 March 2010 Product data sheet 1.

Product profile 1.

Low collector-emitter saturation voltage VCEsat.
Optimized switching time.
High collector current capability IC and ICM.
High collector current gain (hFE) at high IC.
High energy efficiency due to less heat generation.
AEC-Q101 qualified.
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

Part Number	Description	Manufacturer
PBSS4032ND	3.5A NPN low VCEsat (BISS) transistor	NXP Semiconductors
PBSS4032NT	2.6A NPN low VCEsat (BISS) transistor	NXP Semiconductors
PBSS4032NX	4.7 A NPN low VCEsat (BISS) transistor	NXP
PBSS4032PD	2.7A PNP low VCEsat (BISS) transistor	NXP Semiconductors
PBSS4032PT	2.4A PNP low VCEsat (BISS) transistor	NXP Semiconductors