• Part: PBSS4032NZ
  • Manufacturer: Nexperia
  • Size: 715.36 KB
Download PBSS4032NZ Datasheet PDF
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PBSS4032NZ Key Features

  • Low collector-emitter saturation voltage VCEsat
  • Optimized switching time
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Other PBSS4032NZ Datasheets

Manufacturer Part Number Description
NXP Semiconductors Logo NXP Semiconductors PBSS4032ND 3.5A NPN low VCEsat (BISS) transistor
NXP Semiconductors Logo NXP Semiconductors PBSS4032NT 2.6A NPN low VCEsat (BISS) transistor
NXP Logo NXP Semiconductors PBSS4032NX 4.7 A NPN low VCEsat (BISS) transistor
NXP Semiconductors Logo NXP Semiconductors PBSS4032PD 2.7A PNP low VCEsat (BISS) transistor
NXP Semiconductors Logo NXP Semiconductors PBSS4032PT 2.4A PNP low VCEsat (BISS) transistor

PBSS4032NZ Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.