PBSS4032NZ transistor equivalent, 4.9a npn transistor.
* Low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain .
* DC-to-DC conversion
* Battery-driven devices
* Power management
* Charging circuits
1.4 Quick referen.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PZ.
1.2 Features and benefits
* Low collector-emitter saturation voltage VCEsat .
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