PMX100UNE datasheet, mosfet equivalent, nexperia

Features and benefits

* Low threshold voltage
* Trench MOSFET technology
* Low profile (0.25 mm)
* ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications
* Ba.

Application

* Battery switch
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick referenc.

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits
* Low threshold voltage
* Trench MOSFET technology <.

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