Datasheet Summary
20 V, P-channel Trench MOSFET
20 March 2023
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Leadless ultra small package 0.63 x 0.33 x 0.25 mm
- Trench MOSFET technology
- Low profile (0.25 mm)
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
- Battery switch
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source...