PE01H18T
PE01H18T is N-Channel Trench Power MOSFET manufactured by semi one.
N-Channel Trench Power MOSFET
General Description
The PE01H18T is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
- VDS=100V; ID=118A@ VGS=10V; RDS(ON)<7.5mΩ @ VGS=10V
- Special Designed for E-Bike Controller Application
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- 72V E-Bike controller applications
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
To-220 Top View
Schematic Diagram
VDS = 100V ID= 118A
RDS(ON)= 6.2mΩ
Package Marking and Ordering...
