PE0208 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE0208 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =200V,ID =16A RDS(ON).

semi one

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Datasheet Details

Part number	PE0208
Manufacturer	semi one
File Size	681.36 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE0208 Datasheet
Additional preview pages of the PE0208 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE0208 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Dec 3, 2018 |