PE0213 Datasheet | semi one

N-Channel Enhancement Mode Power MOSFET Description The PE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V (Typ:123mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Boost converters - LED backlighting - Uninterruptible power supply Schematic diagram TO-220-3L top...