PE0213 Datasheet, semi one

* VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V (Typ:123mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.

General Features
* VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V (Typ:123mΩ)
* High density cell design for ul.

The PE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V (Typ:123mΩ)
* High de.