PE02N05 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =50V,ID =2.8A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surf.
The PE02N05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
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