PE02N05
PE02N05 is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE02N05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL Features
- VDS =50V,ID =2.8A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
S Schematic diagram
Marking and pin Assignment
Application
- Battery Switch
- DC/DC Converter
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