PE15N10 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =100V,ID =15A RDS(ON) < 100mΩ @ VGS=10V (Typ:85mΩ )
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
General Features
* VDS =100V,ID =15A RDS(ON) < 100mΩ @ VGS=10V (Typ:85mΩ )
* High density cell design for ultr.
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