PE1520 Datasheet | semi one

N-Channel Enhancement Mode Power MOSFET Description The PE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V (Typ:70mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Application - Boost converters - LED backlighting - Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top...