PE15N10 Datasheet | semi one

N-Channel Enhancement Mode Power MOSFET Description The PE15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =100V,ID =15A RDS(ON) < 100mΩ @ VGS=10V (Typ:85mΩ ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Marking and pin assignment 100% UIS TESTED! 100%...