PE1011E
PE1011E is P-Channel Enhancement Mode Power MOSFET manufactured by semi one.
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL Features
- VDS = -20V,ID =-0.6A RDS(ON) <700mΩ @ VGS=-4.5V RDS(ON) <860mΩ @ VGS=-2.5V
- High Power and current handing capability
- Lead free product is acquired
- Gate-Source ESD Protection
Application
- Battery operated Systems
- Load/ power Switching Cell Phones,Pagers
- Power Supply Converter Circuits
Schematic diagram Marking and pin Assignment
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