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PE1012E - N-Channel Enhancement Mode Power MOSFET

General Description

The PE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID =0.6A RDS(ON).

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Datasheet Details

Part number PE1012E
Manufacturer semi one
File Size 113.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE1012E Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE1012E N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID =0.6A RDS(ON) <700mΩ @ VGS=4.5V RDS(ON) <850mΩ @ VGS=2.