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PE10N10 - N-Channel Enhancement Mode Power MOSFET

General Description

The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number PE10N10
Manufacturer semi one
File Size 837.31 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE10N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE10N10 N-Channel Enhancement Mode Power MOSFET Description The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =9.