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PE1505 - N-Channel Enhancement Mode Power MOSFET

General Description

The PE1505 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ）.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Schematic diagram.

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Datasheet Details

Part number PE1505
Manufacturer semi one
File Size 300.06 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE1505 Datasheet

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PE1505 N-Channel Enhancement Mode Power MOSFET Description The PE1505 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =5.