PE1012A
PE1012A is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE1012A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL Features
- VDS = 20V,ID = 0.8A
- RDS(ON) <300mΩ @ VGS=4.5V
- RDS(ON) <350mΩ @ VGS=2.5V
- RDS(ON) <600mΩ @ VGS=1.8V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Load switch
- Power management
Schematic diagram 3D
G1
2S
Marking and pin Assignment
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