Datasheet4U Logo Datasheet4U.com

PE1012A - N-Channel Enhancement Mode Power MOSFET

General Description

The PE1012A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 0.8A.
  • RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number PE1012A
Manufacturer semi one
File Size 1.24 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE1012A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE1000D-10F CERMAX FOCUSED XENON ARC LAMPS PerkinElmer Optoelectronics
PE1000D-10UV CERMAX FOCUSED XENON ARC LAMPS PerkinElmer Optoelectronics
PE1000D-13F CERMAX XENON ARC LAMPS PerkinElmer Optoelectronics
PE1000DF CERMAX XENON ARC LAMPS PerkinElmer Optoelectronics
PE1000DUV CERMAX XENON ARC LAMPS PerkinElmer Optoelectronics

Other Datasheets by semi one

Part Number Description
PE1012E N-Channel Enhancement Mode Power MOSFET
PE1011E P-Channel Enhancement Mode Power MOSFET
PE10N10 N-Channel Enhancement Mode Power MOSFET
PE1505 N-Channel Enhancement Mode Power MOSFET
PE1520 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE1012A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE1012A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 0.8A ● RDS(ON) <300mΩ @ VGS=4.5V ● RDS(ON) <350mΩ @ VGS=2.5V ● RDS(ON) <600mΩ @ VGS=1.