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PE2N7002 Datasheet Preview

PE2N7002 Datasheet

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET
PE2N7002
General Features
VDS = 60V,ID = 0.115A
RDS(ON) < 3@ VGS=5V
RDS(ON) < 2@ VGS=10V
Lead free product is acquired
Surface mount package
Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids,lamps, hammers,display,
memories, transistors, etc.
Battery operated systems
Solid-state relays
Schematic diagram
Marking and pin assignment
SOT-23 top view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
0.115
0.8
0.2
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
625 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Min Typ Max Unit
60 68
--
-
1
V
μA
WWW.SEMI-ONE.COM
Page 1




semi one

PE2N7002 Datasheet Preview

PE2N7002 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=5V, ID=0.05A
VGS=10V, ID=0.5A
VDS=10V,ID=0.2A
PE2N7002
- - ±100 nA
1 1.7
- 1.3
- 1.1
0.08 -
2.5
3
2
-
V
S
VDS=30V,VGS=0V,
F=1.0MHz
- 20
- 10
- 3.6
50
20
5
PF
PF
PF
VDD=30V,ID=0.2A
VGS=10V,RGEN=10
VDS=10V,ID=0.115A,
VGS=4.5V
- 10
- 50
- 17
- 10
- 1.7
-
-
-
-
3
nS
nS
nS
nS
nC
VGS=0V,IS=0.115A
- - 1.2
V
-
- 0.115
A
WWW.SEMI-ONE.COM
Page 2


Part Number PE2N7002
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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