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N-Channel Enhancement Mode Power MOSFET
PE2N7002K
General Features
● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display,
memories, transistors, etc.
PE2N7002K Datasheet
