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PE2N7002K - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – PE2N7002K

Datasheet Details

Part number PE2N7002K
Manufacturer semi one
File Size 173.90 KB
Description N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET PE2N7002K General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc.
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