The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
N-Channel Enhancement Mode Power MOSFET
PE2N7002
General Features
● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
● Lead free product is acquired ● Surface mount package
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids,lamps, hammers,display,
memories, transistors, etc. ●Battery operated systems ●Solid-state relays
Schematic diagram Marking and pin assignment
SOT-23 top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60 ±20 0.115 0.8 0.
PE2N7002 Datasheet
