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PE2N7002 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number PE2N7002
Manufacturer semi one
File Size 171.99 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2N7002 Datasheet
Additional preview pages of the PE2N7002 datasheet.

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N-Channel Enhancement Mode Power MOSFET PE2N7002 General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids,lamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Schematic diagram Marking and pin assignment SOT-23 top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 60 ±20 0.115 0.8 0.
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