PE60P20K mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-60V,ID =-20A RDS(ON) <70mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
General Features
* VDS =-60V,ID =-20A RDS(ON) <70mΩ @ VGS=-10V
* High density cell design for ultra low Rdson <.
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