PE60P50 Datasheet | semi one

P-Channel Enhancement Mode Power MOSFET Description The PE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features - VDS =-60V,ID =-50A RDS(ON) <40mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Load switch Schematic diagram 100% UIS TESTED! 100% ΔVds TESTED! Marking and pin assignment TO-220-3L top...