PED2312A
PED2312A is Dual N & P-Channel Enhancement Mode Power MOSFET manufactured by semi one.
Dual Enhancement Mode Power MOSFET (N- and P- Channel)
DESCRIPTION
The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL Features
- P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
- N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V
(6)D1
(2)D2
(2)G1
(5)G2
(1)S1
(4)S2
N-Channel MOSFET P-Channel MOSFET
Schematic diagram
Application
- PWM applications
- Load switch
- Power management
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