PED8810M mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product i.
It is ESD protested.
General Features
* VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rat.
The PED8810M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
General Features
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