AGM12N10AP Datasheet - AGMSEMI

AGM12N10AP MOSFET

AGM12N10AP Features

* BVDSS RDSON ID 100V 9.3mΩ 55A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN3.3

* 3.3 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* A

Datasheet Details

AGM12N10AP

AGMSEMI

1.43 MB

Mosfet.

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