Datasheet Details
- Part number
- AGM12N10AP
- Manufacturer
- AGMSEMI
- File Size
- 1.43 MB
- Datasheet
- AGM12N10AP-AGMSEMI.pdf
- Description
- MOSFET
AGM12N10AP Description
AGM12N10AP * General .
The AGM12N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
AGM12N10AP Features
* BVDSS
RDSON
ID
100V
9.3mΩ
55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
PDFN3.3
* 3.3 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* A
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