AGM12N10AP MOSFET

AGMSEMI

Description

AGM12N10AP * General .
The AGM12N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number: AGM12N10AP
Manufacturer: AGMSEMI
File Size: 1.43 MB
Datasheet: AGM12N10AP-AGMSEMI.pdf
Description: MOSFET

Features

* BVDSS RDSON ID 100V 9.3mΩ 55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching PDFN3.3
* 3.3 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* A

AGM12N10AP Distributors

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AGM12N10AP MOSFET AGMSEMI

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