AGM12N10AP Datasheet, Mosfet, AGMSEMI

AGM12N10AP Features

• Mosfet BVDSS RDSON ID 100V 9.3mΩ 55A
• Advance high cell density Trench technology
• Low RDS(ON) to minimize conductive loss
• Low Gate Charge for fast switching

PDF File Details

Part number:

AGM12N10AP

Manufacturer:

AGMSEMI

File Size:

1.43MB

Download:

📄 Datasheet

Description:

Mosfet. The AGM12N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product S

AGM12N10AP Application

• Applications
• Features BVDSS RDSON ID 100V 9.3mΩ 55A
• Advance high cell density Trench technology
• Low RDS(ON) to

TAGS

AGM12N10AP

AGMSEMI

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