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AGM12N10AP Datasheet - AGMSEMI

AGM12N10AP, MOSFET

AGM12N10AP * General .
The AGM12N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
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AGM12N10AP-AGMSEMI.pdf

Preview of AGM12N10AP PDF

Datasheet Details

Part number:

AGM12N10AP

Manufacturer:

AGMSEMI

File Size:

1.43 MB

Description:

MOSFET

Features

* BVDSS RDSON ID 100V 9.3mΩ 55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching PDFN3.3
* 3.3 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* A

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