Part number:
AGM12N10AP
Manufacturer:
AGMSEMI
File Size:
1.43 MB
Description:
Mosfet.
* BVDSS RDSON ID 100V 9.3mΩ 55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching PDFN3.3
* 3.3 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested
* A
AGM12N10AP Datasheet (1.43 MB)
AGM12N10AP
AGMSEMI
1.43 MB
Mosfet.
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